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SEM analysis and selenization of Cu-In alloy films produced by co-sputtering of metals

Identifieur interne : 004C44 ( Main/Repository ); précédent : 004C43; suivant : 004C45

SEM analysis and selenization of Cu-In alloy films produced by co-sputtering of metals

Auteurs : RBID : Pascal:09-0109320

Descripteurs français

Pascal (Inist)
- Microscopie électronique balayage, Cuivre Indium Alliage, Pulvérisation irradiation, Cuivre alliage, Dispositif optoélectronique, Diffractométrie RX, Surface rugueuse, Structure surface, Structure îlot, Morphologie, Spectrométrie Raman, Couche mince.

English descriptors

KwdEn :
- Copper Indium Alloys, Copper alloy, Island structure, Morphology, Optoelectronic device, Raman spectrometry, Rough surface, Scanning electron microscopy, Sputtering, Surface structure, Thin film, X ray diffractometry.

Abstract

Co-sputtered copper-indium (Cu-In) alloy layers were investigated as precursors for CuInSe₂ (CIS) formation. Results of scanning electron microscopy (SEM), EDS and X-ray diffraction (XRD) studies reveal the inhomogeneity of the films composition. The films have a rough surface structure with well-defined islands crystallized within the film matrix. The elemental composition of the island-type crystals corresponds to the compound Culn₂and the composition of the matrix area corresponds to the Cu11 1n₉phase. The influence of heating temperature, time and Se pressure on the morphology and composition of films is studied using SEM, XRD and Raman spectroscopies. Thereby optimal technological parameters for the production of single-phase CIS layers are determined.

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Le document en format XML

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<author><name sortKey="Raudoja, J" uniqKey="Raudoja J">J. Raudoja</name>
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<front><div type="abstract" xml:lang="en">Co-sputtered copper-indium (Cu-In) alloy layers were investigated as precursors for CuInSe<sub>2</sub>
 (CIS) formation. Results of scanning electron microscopy (SEM), EDS and X-ray diffraction (XRD) studies reveal the inhomogeneity of the films composition. The films have a rough surface structure with well-defined islands crystallized within the film matrix. The elemental composition of the island-type crystals corresponds to the compound Culn<sub>2</sub>
and the composition of the matrix area corresponds to the Cu11 1n<sub>9</sub>
phase. The influence of heating temperature, time and Se pressure on the morphology and composition of films is studied using SEM, XRD and Raman spectroscopies. Thereby optimal technological parameters for the production of single-phase CIS layers are determined.</div>
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SEM analysis and selenization of Cu-In alloy films produced by co-sputtering of metals

SEM analysis and selenization of Cu-In alloy films produced by co-sputtering of metals

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri